English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 25 V |
| 电流 - 连续漏极 (id) @ 25°c: | 11.4A (Ta), 78A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 6mOhm @ 78A, 10V |
| vgs(th) (最大值) @ id: | 3V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 35 nC @ 4.5 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 2250 pF @ 12 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 1.4W (Ta), 64W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | DPAK |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IXCY01N90EWickmann / Littelfuse |
MOSFET N-CH 900V 250MA TO252 |
|
FQP7N10LSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 7.3A TO220-3 |
|
SI7703EDN-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 4.3A PPAK1212-8 |
|
ZVN4306AVSTZZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 1.1A E-LINE |
|
IRFI840GLCVishay / Siliconix |
MOSFET N-CH 500V 4.5A TO220-3 |
|
SPP21N50C3HKSA1IR (Infineon Technologies) |
MOSFET N-CH 560V 21A TO220-3 |
|
APT5SM170BMicrosemi |
SICFET N-CH 1700V 5A TO247-3 |
|
IRFSL17N20DPBFIR (Infineon Technologies) |
MOSFET N-CH 200V 16A TO262 |
|
IXFH30N40QWickmann / Littelfuse |
MOSFET N-CH 400V 30A TO247AD |
|
IRF730LVishay / Siliconix |
MOSFET N-CH 400V 5.5A I2PAK |
|
FQD2N80TFSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 800V 1.8A DPAK |
|
NTJS3157NT2Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 20V 3.2A SC88/SC70-6 |
|
IRF737LCLVishay / Siliconix |
MOSFET N-CH 300V 6.1A I2PAK |
