English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchMV™ |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 55 V |
| 电流 - 连续漏极 (id) @ 25°c: | 110A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 7mOhm @ 25A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 100µA |
| 栅极电荷 (qg) (max) @ vgs: | 67 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 3080 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 230W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | TO-263 (IXTA) |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRF7322D1IR (Infineon Technologies) |
MOSFET P-CH 20V 5.3A 8SO |
|
FQPF13N10LSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 8.7A TO220F |
|
SPP80N03S2L-03IR (Infineon Technologies) |
MOSFET N-CH 30V 80A TO220-3 |
|
STD3NM50T4STMicroelectronics |
MOSFET N-CH 550V 3A DPAK |
|
STF20NM60DSTMicroelectronics |
MOSFET N-CH 600V 20A TO220FP |
|
SUD50N03-06AP-T4E3Vishay / Siliconix |
MOSFET N-CH 30V 90A TO252 |
|
IPP80N06S405AKSA1IR (Infineon Technologies) |
MOSFET N-CH 60V 80A TO220-3 |
|
SPP100N08S2L-07IR (Infineon Technologies) |
MOSFET N-CH 75V 100A TO220-3 |
|
AO3422LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 55V 2.1A SOT23-3 |
|
AO4292Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 100V 8A 8SOIC |
|
SPU09P06PLIR (Infineon Technologies) |
MOSFET P-CH 60V 9.7A TO251-3 |
|
GA10JT12-247GeneSiC Semiconductor |
TRANS SJT 1200V 10A TO247AB |
|
STP6N120K3STMicroelectronics |
MOSFET N-CH 1200V 6A TO220 |
