English
简体中文
SMA-SJB/SMP-RP G178 12I
MOSFET N-CH 40V 22A/85A 8DFN
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 40 V |
| 电流 - 连续漏极 (id) @ 25°c: | 22A (Ta), 85A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 2.5mOhm @ 20A, 10V |
| vgs(th) (最大值) @ id: | 2.3V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 51 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 3800 pF @ 20 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 2.3W (Ta), 83W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-DFN (5x6) |
| 包/箱: | 8-PowerSMD, Flat Leads |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AOW10T60PAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 10A TO262 |
|
IRF7701TRPBFIR (Infineon Technologies) |
MOSFET P-CH 12V 10A 8TSSOP |
|
SUP60N02-4M5P-E3Vishay / Siliconix |
MOSFET N-CH 20V 60A TO220AB |
|
IPB90R340C3ATMA1IR (Infineon Technologies) |
MOSFET N-CH 900V 15A D2PAK |
|
IRFBC40ASVishay / Siliconix |
MOSFET N-CH 600V 6.2A D2PAK |
|
IRFR024NTRRPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 17A DPAK |
|
IRF530STRLVishay / Siliconix |
MOSFET N-CH 100V 14A D2PAK |
|
RJK0353DPA-WS#J0BRenesas Electronics America |
MOSFET N-CH 30V 35A WPAK |
|
IRF7759L2TR1PBFIR (Infineon Technologies) |
MOSFET N-CH 75V 26A DIRECTFET |
|
IPI05N03LAIR (Infineon Technologies) |
MOSFET N-CH 25V 80A TO262-3 |
|
IXFK26N60QWickmann / Littelfuse |
MOSFET N-CH 600V 26A TO264AA |
|
IRFR3707TRLIR (Infineon Technologies) |
MOSFET N-CH 30V 61A DPAK |
|
IRFH5104TRPBFIR (Infineon Technologies) |
MOSFET N-CH 40V 24A/100A PQFN |