类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 82A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 8.4mOhm @ 38A, 10V |
vgs(th) (最大值) @ id: | 2.6V @ 1mA |
栅极电荷 (qg) (max) @ vgs: | 76 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 3950 pF @ 10 V |
场效应管特征: | - |
功耗(最大值): | 72W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | ATPAK |
包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
RJK03E1DNS-00#J5Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR |
|
IRF543Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
MTV32N20ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
2SK2529-90-ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
SI4953DYRochester Electronics |
P-CHANNEL POWER MOSFET |
|
2SK544ERochester Electronics |
N-CHANNEL SMALL SIGNAL MOSFET |
|
SIR826DP-T1-RE3Vishay / Siliconix |
MOSFET N-CH 80V 60A PPAK SO-8 |
|
IRF632Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
NE5550779A-T1A-ARochester Electronics |
N-CHANNEL POWER MOSFET |
|
IPP052NE7N3 GRochester Electronics |
N-CHANNEL POWER MOSFET |
|
RJK03E0DNS-02#J5Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
2SJ463A(91)-T1-ARochester Electronics |
SMALL SIGNAL P-CHANNEL MOSFET |
|
IRFBC40RRochester Electronics |
N-CHANNEL POWER MOSFET |