PWR XFMR LAMINATED 10000VA CHAS
MOSFET N-CH 30V 50A DFN3333
类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 50A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 6mOhm @ 15A, 10V |
vgs(th) (最大值) @ id: | 2.5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 28 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 2150 pF @ 15 V |
场效应管特征: | - |
功耗(最大值): | 30W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | DFN3333 |
包/箱: | 8-VDFN Exposed Pad |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
NTHL080N120SC1ASanyo Semiconductor/ON Semiconductor |
TRANS SJT N-CH 1200V 31A TO247-3 |
|
SIPC05N80C3X1SA2IR (Infineon Technologies) |
TRANSISTOR N-CH |
|
SFT1407-TL-ERochester Electronics |
N-CHANNEL SILICON MOSFET |
|
STU6N65M2-SSTMicroelectronics |
MOSFET N-CH 650V 4A IPAK |
|
SSM3J09FU,LFToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 30V 200MA USM |
|
IRL40S212ARMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 195A D2PAK |
|
DMP2042UCB4-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 4.6A U-WLB1010-4 |
|
DMT2004UFG-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 24V 70A POWERDI3333 |
|
RLD03N06CLERochester Electronics |
N-CHANNEL POWER MOSFET |
|
RJK03J4DPA-00#J5ARochester Electronics |
N-CHANNEL POWER SWITCHING MOSFET |
|
SPP11N60S5XKSA1IR (Infineon Technologies) |
LOW POWER_LEGACY |
|
RJK4512DPP-00#T2Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
JDX6002Rochester Electronics |
NFET T0220FP JPN |