CAP CER 15PF 500V NP0 1206
MOSFET N-CH 1100V 24A 24SMPD
类型 | 描述 |
---|---|
系列: | HiPerFET™, PolarP2™ |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 1100 V |
电流 - 连续漏极 (id) @ 25°c: | 24A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 290mOhm @ 20A, 10V |
vgs(th) (最大值) @ id: | 6.5V @ 1mA |
栅极电荷 (qg) (max) @ vgs: | 310 nC @ 10 V |
vgs (最大值): | ±30V |
输入电容 (ciss) (max) @ vds: | 19000 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 500W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | 24-SMPD |
包/箱: | 24-PowerSMD, 21 Leads |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
NTMJS1D6N06CLTWGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 38A/250A 8LFPAK |
|
NVMFS6H852NLT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 11A/42A 5DFN |
|
2SK3570-ZK-E1-AZRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR |
|
SIHH186N60EF-T1GE3Vishay / Siliconix |
MOSFET N-CH 600V 16A PPAK 8 X 8 |
|
NTH4L160N120SC1Sanyo Semiconductor/ON Semiconductor |
TRANS SJT N-CH 1200V 17.3A TO247 |
|
2N7002W-GComchip Technology |
MOSFET N-CH 60V 0.25A SOT323 |
|
SIPC03N50C3X1SA1IR (Infineon Technologies) |
TRANSISTOR N-CH |
|
2SK1283(1)-AZRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IRFP152Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
APT1201R6BVRGRoving Networks / Microchip Technology |
MOSFET N-CH 1200V 8A TO-247 |
|
IRF9633Rochester Electronics |
P-CHANNEL POWER MOSFET |
|
RF1S30N06LESM9ARochester Electronics |
N-CHANNEL POWER MOSFET |
|
2SK2372(1)-ARochester Electronics |
DISCRETE / POWER MOSFET |