类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | - |
技术: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | - |
供应商设备包: | - |
包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IXTK3N250LWickmann / Littelfuse |
MOSFET N-CH 2500V 3A TO264 |
|
HS54095-01-ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
N0434N-S23-AYRenesas Electronics America |
MOSFET N-CH 40V 100A TO262 |
|
NTMJS1D5N04CLTWGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 38A/200A 8LFPAK |
|
DMP1012USS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 8V-24V SO-8 T&R 2. |
|
RJK0351DPA-WS#J0Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
RFL1N12Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
APTM120UM70FAGRoving Networks / Microchip Technology |
MOSFET N-CH 1200V 171A SP6 |
|
FCH029N65S3-F155Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 75A TO247-3 |
|
2SJ451ZK-TL-ERochester Electronics |
P-CHANNEL SMALL SIGNAL MOSFET |
|
IPI80404S3-03Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
RJK0331DPB-01#J0Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR |
|
UPA2702TP-E1-AZRochester Electronics |
N-CHANNEL POWER MOSFET |