CAP CER 33PF 200V C0G/NP0 1210
FIXED IND 8.2UH 8A 25.5 MOHM SMD
CONN SFP RCPT W/CAGE 2X8 320P RA
N-CHANNEL POWER MOSFET
类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | - |
技术: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | - |
供应商设备包: | - |
包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
APTM120UM70FAGRoving Networks / Microchip Technology |
MOSFET N-CH 1200V 171A SP6 |
|
FCH029N65S3-F155Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 75A TO247-3 |
|
2SJ451ZK-TL-ERochester Electronics |
P-CHANNEL SMALL SIGNAL MOSFET |
|
IPI80404S3-03Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
RJK0331DPB-01#J0Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR |
|
UPA2702TP-E1-AZRochester Electronics |
N-CHANNEL POWER MOSFET |
|
NVD4856NT4G-VF01Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 25V 13.3A/89A DPAK |
|
RJK0397DPA-0G#J7ARochester Electronics |
POWER TRANSISTOR, MOSFET |
|
IPW65R090CFD7XKSA1IR (Infineon Technologies) |
HIGH POWER_NEW |
|
YJL05N04A-F2-0000HF |
N-CH MOSFET 40V 5A SOT-23-3L |
|
SIJ150DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 45V 30.9A/110A PPAK |
|
IPI60R165CPXKSA1IR (Infineon Technologies) |
HIGH POWER_LEGACY |
|
IXTA180N10T7-TRLWickmann / Littelfuse |
MOSFET N-CH 100V 180A TO263-7 |