类型 | 描述 |
---|---|
系列: | TrenchFET® |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 8 V |
电流 - 连续漏极 (id) @ 25°c: | 12A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 1.2V, 4.5V |
rds on (max) @ id, vgs: | 9.4mOhm @ 15.7A, 4.5V |
vgs(th) (最大值) @ id: | 800mV @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 25.2 nC @ 5 V |
vgs (最大值): | ±5V |
输入电容 (ciss) (max) @ vds: | 1508 pF @ 4 V |
场效应管特征: | - |
功耗(最大值): | 3.5W (Ta), 19W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | PowerPAK® SC-70-6 Single |
包/箱: | PowerPAK® SC-70-6 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
2SJ176-ERochester Electronics |
P-CHANNEL POWER MOSFET |
|
RFM12P10Rochester Electronics |
P-CHANNEL POWER MOSFET |
|
RFA100N05ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
RFP2N20Rochester Electronics |
N-CHANNEL, MOSFET |
|
AON6314Alpha and Omega Semiconductor, Inc. |
MOSFET N-CHANNEL 30V 85A 8DFN |
|
RJK03T2DPA-00#J5ARochester Electronics |
N-CHANNEL POWER MOSFET |
|
STL13NM60NSTMicroelectronics |
MOSFET N-CH 600V 10A PWRFLAT HV |
|
RJK03P6DPA-WS#J5ARochester Electronics |
N-CHANNEL POWER MOSFET |
|
NTMFS10N7D2CSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 78A 8PQFN |
|
NTMJS0D8N04CLTWGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 56A/368A 8LFPAK |
|
BB504CDS-TL-ERochester Electronics |
RF N-CHANNEL MOSFET |
|
TK7S10N1Z,LXHQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 100V 7A DPAK |
|
SSM6K518NU,LFToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 20V 6A 6UDFNB |