类型 | 描述 |
---|---|
系列: | U-MOSVIII-H |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 100 V |
电流 - 连续漏极 (id) @ 25°c: | 7A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 48mOhm @ 3.5A, 10V |
vgs(th) (最大值) @ id: | 4V @ 100µA |
栅极电荷 (qg) (max) @ vgs: | 7.1 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 470 pF @ 10 V |
场效应管特征: | - |
功耗(最大值): | 50W (Tc) |
工作温度: | 175°C |
安装类型: | Surface Mount |
供应商设备包: | DPAK+ |
包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SSM6K518NU,LFToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 20V 6A 6UDFNB |
|
PMPB11R2VPXNexperia |
MOSFET P-CH 12V 9.7A DFN2020M-6 |
|
NTBGS6D5N15MCSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 150V 15A/121A D2PAK |
|
APTM10DAM02GRoving Networks / Microchip Technology |
MOSFET N-CH 100V 495A SP6 |
|
UPA2724UT1A-E2-AYRochester Electronics |
N-CHANNEL POWER MOSFET |
|
VN2406MRochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
STD1028T4Rochester Electronics |
NFET DPAK SPCL 60V TR |
|
STD1059-001Rochester Electronics |
NFET DPAK SPECIAL |
|
RFP50N05Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
RFP6P08Rochester Electronics |
P-CHANNEL POWER MOSFET |
|
NVH4L160N120SC1Sanyo Semiconductor/ON Semiconductor |
TRANS SJT N-CH 1200V 17.3A TO247 |
|
SI6933DQRochester Electronics |
P-CHANNEL MOSFET |
|
2SK1587-AZRochester Electronics |
N-CHANNEL POWER MOSFET |