类型 | 描述 |
---|---|
系列: | PowerTrench® |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 100 V |
电流 - 连续漏极 (id) @ 25°c: | 78A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 6V, 10V |
rds on (max) @ id, vgs: | 7.2mOhm @ 28A, 10V |
vgs(th) (最大值) @ id: | 4V @ 150µA |
栅极电荷 (qg) (max) @ vgs: | 37 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 2635 pF @ 50 V |
场效应管特征: | - |
功耗(最大值): | 83W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | 8-PQFN (5x6), Power56 |
包/箱: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
NTMJS0D8N04CLTWGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 56A/368A 8LFPAK |
|
BB504CDS-TL-ERochester Electronics |
RF N-CHANNEL MOSFET |
|
TK7S10N1Z,LXHQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 100V 7A DPAK |
|
SSM6K518NU,LFToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 20V 6A 6UDFNB |
|
PMPB11R2VPXNexperia |
MOSFET P-CH 12V 9.7A DFN2020M-6 |
|
NTBGS6D5N15MCSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 150V 15A/121A D2PAK |
|
APTM10DAM02GRoving Networks / Microchip Technology |
MOSFET N-CH 100V 495A SP6 |
|
UPA2724UT1A-E2-AYRochester Electronics |
N-CHANNEL POWER MOSFET |
|
VN2406MRochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
STD1028T4Rochester Electronics |
NFET DPAK SPCL 60V TR |
|
STD1059-001Rochester Electronics |
NFET DPAK SPECIAL |
|
RFP50N05Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
RFP6P08Rochester Electronics |
P-CHANNEL POWER MOSFET |