English
简体中文
MOSFET N-CH 150V 100A TO263-3
650V 50A FIELD STOP TRENCH IGBT
JUMPER TERM BLK 3POS FLAT PIN
IC TRANSCEIVER 2/2 14SOIC
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| igbt型: | Trench Field Stop |
| 电压 - 集电极发射极击穿（最大值）: | 650 V |
| 电流 - 集电极 (ic) (max): | 45 A |
| 电流 - 集电极脉冲 (icm): | 200 A |
| vce(on) (max) @ vge, ic: | 1.9V @ 15V, 50A |
| 功率 - 最大值: | 94 W |
| 开关能量: | 1.17mJ (on), 940µJ (off) |
| 输入类型: | Standard |
| 栅极电荷: | 104 nC |
| td（开/关）@ 25°c: | 41ns/142ns |
| 测试条件: | 400V, 50A, 10Ohm, 15V |
| 反向恢复时间 (trr): | - |
| 工作温度: | -40°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 包/箱: | TO-3PFM, SC-93-3 |
| 供应商设备包: | TO-3PFM |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
APT30GP60BGRoving Networks / Microchip Technology |
IGBT 600V 100A 463W TO247 |
|
IKP40N65H5XKSA1IR (Infineon Technologies) |
IGBT 650V 74A 255W TO220-3 |
|
IKP10N60TXKSA1IR (Infineon Technologies) |
IGBT 600V 20A 110W TO220-3 |
|
HGTP5N120BNDSanyo Semiconductor/ON Semiconductor |
IGBT 1200V 21A 167W TO220AB |
|
APT150GN60B2GRoving Networks / Microchip Technology |
IGBT 600V 220A 536W SOT227 |
|
APT30GS60BRDQ2GRoving Networks / Microchip Technology |
IGBT 600V 54A 250W SOT227 |
|
FMG1G300US60HERochester Electronics |
IGBT, 300A, 600V, N-CHANNEL |
|
IXYT80N90C3Wickmann / Littelfuse |
IGBT 900V 165A 830W TO268 |
|
IKFW60N60DH3EXKSA1IR (Infineon Technologies) |
IGBT 600V 50A TO247-3 |
|
IRGP4062DPBFIR (Infineon Technologies) |
IGBT 600V 48A 250W TO247AC |
|
IXXH75N60B3D1Wickmann / Littelfuse |
IGBT 600V 160A 750W TO247 |
|
AUIRGS4062D1TRLRochester Electronics |
IGBT, 59A I(C), 600V V(BR)CES, N |
|
STGWA30H60DFBSTMicroelectronics |
IGBT |