English
简体中文
IGBT 650V 310A 940W PLUS247
IC REG LINEAR 3.1V 200MA HSNT6-B
IC SRAM 4.5MBIT PAR 165CABGA
XTAL OSC XO 25.000625MHZ HCMOS
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | GenX4™, XPT™ |
| 包裹: | Tube |
| 零件状态: | Active |
| igbt型: | PT |
| 电压 - 集电极发射极击穿（最大值）: | 650 V |
| 电流 - 集电极 (ic) (max): | 310 A |
| 电流 - 集电极脉冲 (icm): | 860 A |
| vce(on) (max) @ vge, ic: | 1.8V @ 15V, 160A |
| 功率 - 最大值: | 940 W |
| 开关能量: | 3.3mJ (on), 1.88mJ (off) |
| 输入类型: | Standard |
| 栅极电荷: | 425 nC |
| td（开/关）@ 25°c: | 52ns/220ns |
| 测试条件: | 400V, 80A, 1Ohm, 15V |
| 反向恢复时间 (trr): | - |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 包/箱: | TO-247-3 |
| 供应商设备包: | PLUS247™-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
APT150GN60LDQ4GRoving Networks / Microchip Technology |
IGBT 600V 220A 536W TO-264L |
|
IGP10N60TXKSA1Rochester Electronics |
IGP10N60 - DISCRETE IGBT WITHOUT |
|
RGS60TS65HRC11ROHM Semiconductor |
650V 30A FIELD STOP TRENCH IGBT. |
|
FGL60N100BNTDSanyo Semiconductor/ON Semiconductor |
IGBT 1000V 60A 180W TO264 |
|
NGTB10N60R2DT4GRochester Electronics |
INSULATED GATE BIPOLAR TRANSISTO |
|
IXYP50N65C3Wickmann / Littelfuse |
IGBT 650V 130A 600W TO220 |
|
NGB8207NT4GRochester Electronics |
IGBT, 20A, 365V, N-CHANNEL |
|
AOK60B65M3Alpha and Omega Semiconductor, Inc. |
IGBT 650V 60A TO247 |
|
IRGP6690D-EPBFRochester Electronics |
IGBT WITH RECOVERY DIODE |
|
STGWA50M65DF2STMicroelectronics |
TRENCH GATE FIELD-STOP IGBT M SE |
|
STGP20H60DFSTMicroelectronics |
IGBT 600V 40A 167W TO220 |
|
IRG8P60N120KD-EPBFRochester Electronics |
IRG8P60N120 - DISCRETE IGBT WITH |
|
STGW30M65DF2STMicroelectronics |
TRENCH GATE FIELD-STOP IGBT M SE |