类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
内存类型: | - |
内存格式: | - |
技术: | - |
内存大小: | - |
内存接口: | - |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | - |
工作温度: | - |
安装类型: | - |
包/箱: | - |
供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
70V3399S133BF8Renesas Electronics America |
IC SRAM 2MBIT PARALLEL 208CABGA |
|
S25FL256SAGBHVB00Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 24BGA |
|
93LC66B-I/STRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 2MHZ 8TSSOP |
|
24LC01BT-E/OTRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C SOT23-5 |
|
PC28F256P30TFEFlip Electronics |
IC FLASH 256MBIT PAR 64EASYBGA |
|
CY7C1543KV18-450BZCRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
CY7C1514KV18-250BZXCCypress Semiconductor |
NO WARRANTY |
|
W949D2DBJX5I TRWinbond Electronics Corporation |
IC DRAM 512MBIT PARALLEL 90VFBGA |
|
S29GL512S10FHI010Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 64BGA |
|
70V657S12BFI8Renesas Electronics America |
IC SRAM 1.125MBIT PAR 208CABGA |
|
24FC04H-E/PRoving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 1MHZ 8DIP |
|
MT29F2G08ABAGAWP-AITES:GMicron Technology |
IC FLASH 2GBIT PARALLEL 48TSOP I |
|
MT46V64M8P-5B:JMicron Technology |
IC DRAM 512MBIT PARALLEL 66TSOP |