







1/2" FLT BL 37.5VDC W/TERM
IMPACT POWER BIT TORX T15 - 15
MAGNETIC SWITCH LATCH SC59
IC FLASH 256MBIT PARALLEL 64FBGA
| 类型 | 描述 |
|---|---|
| 系列: | GL-P |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH - NOR |
| 内存大小: | 256Mb (32M x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字,页: | 90ns |
| 访问时间: | 90 ns |
| 电压 - 电源: | 3V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 64-LBGA |
| 供应商设备包: | 64-FBGA (13x11) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
70V659S10BC8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 256CABGA |
|
|
93C66-E/SNRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 2MHZ 8SOIC |
|
|
CY15B104QI-20LPXCCypress Semiconductor |
IC FRAM 4MBIT SPI 20MHZ 8GQFN |
|
|
71V016SA20PHIRochester Electronics |
IC SRAM 1MBIT PARALLEL 44TSOP II |
|
|
24C00T-E/OTRoving Networks / Microchip Technology |
IC EEPROM 128B I2C SOT23-5 |
|
|
S29GL512S11DHV020Rochester Electronics |
IC FLASH 512MBIT PARALLEL 64FBGA |
|
|
EM6GE16EWXD-10HEtron Technology |
IC DRAM 4GBIT PARALLEL 96FBGA |
|
|
S25FL128SDSNFI003Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 8WSON |
|
|
IS66WVH16M8DALL-166B1LIISSI (Integrated Silicon Solution, Inc.) |
IC PSRAM 128MBIT PAR 24TFBGA |
|
|
CAT93C86BVI-GT3Rochester Electronics |
CAT93C86 - 16-KBIT MICROWIRE SER |
|
|
93AA66AT-I/MCRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 2MHZ 8DFN |
|
|
25LC160D-E/STRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 8TSSOP |
|
|
IS62WV51216EALL-55BLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 8MBIT PARALLEL 48VFBGA |