类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Dual Port, Asynchronous |
内存大小: | 4.5Mb (256K x 18) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 10ns |
访问时间: | 10 ns |
电压 - 电源: | 3.15V ~ 3.45V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 208-LFBGA |
供应商设备包: | 208-CABGA (15x15) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS62C256AL-45TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 256KBIT PAR 28TSOP I |
|
IS45S32800J-7BLA1-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 90TFBGA |
|
24FC04HT-I/MSRoving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 1MHZ 8MSOP |
|
IS42S32160F-75EBLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 90TFBGA |
|
M95128-DFMC6TGSTMicroelectronics |
IC EEPROM 128KBIT SPI 8UFDFPN |
|
S26KL256SDABHB020Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 24FBGA |
|
IS43R16320E-5TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 66TSOP II |
|
MR0A08BCMA35Everspin Technologies, Inc. |
IC RAM 1MBIT PARALLEL 48FBGA |
|
CY7C1354CV25-166AXCTCypress Semiconductor |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
RM25C64C-LMAI-TAdesto Technologies |
IC CBRAM 64KBIT SPI 10MHZ 8UDFN |
|
CY7C1462KVE25-167BZICypress Semiconductor |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
MR25H256MDFREverspin Technologies, Inc. |
IC RAM 256KBIT SPI 40MHZ 8DFN |
|
AT25DL081-MHN-TAdesto Technologies |
IC FLASH 8MBIT SPI 100MHZ 8UDFN |