类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 32Kb (4K x 8) |
内存接口: | I²C |
时钟频率: | 400 kHz |
写周期时间 - 字,页: | 5ms |
访问时间: | 900 ns |
电压 - 电源: | 1.7V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-WFDFN Exposed Pad |
供应商设备包: | 8-TDFN (2x3) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
S29GL128S10FAIV13Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 64FBGA |
|
CAT93C66S-TE13Rochester Electronics |
IC EEPROM 4KBIT SPI 2MHZ 8SOIC |
|
SST39SF040-55-4C-NHE-TRoving Networks / Microchip Technology |
IC FLASH 4MBIT PARALLEL 32PLCC |
|
CAT24M01WI-GRochester Electronics |
IC EEPROM 1MBIT I2C 1MHZ 8SOIC |
|
CY7C4041KV13-600FCXCRochester Electronics |
IC SRAM 72MBIT PARALLEL 361FCBGA |
|
CY7C1518KV18-250BZIRochester Electronics |
DDR SRAM, 4MX18, 0.45NS PBGA165 |
|
71V3558SA166BQGIRenesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
CY7C1009D-10VXITCypress Semiconductor |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
70T659S12BCRenesas Electronics America |
IC SRAM 4.5MBIT PAR 256CABGA |
|
SST39SF040-70-4C-PHERoving Networks / Microchip Technology |
IC FLASH 4MBIT PARALLEL 32DIP |
|
MX25R1035FM2IL0Macronix |
IC FLASH 1MBIT SPI/QUAD I/O 8SOP |
|
W631GU6MB-12Winbond Electronics Corporation |
IC DRAM 1GBIT PARALLEL 96VFBGA |
|
IS42S83200G-7TLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 54TSOP II |