English
简体中文
SSR RELAY SPST-NO 2A 100-240V
IC SRAM 36MBIT PARALLEL 165FBGA
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Synchronous, QDR II |
| 内存大小: | 36Mb (4M x 9) |
| 内存接口: | Parallel |
| 时钟频率: | 250 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | - |
| 电压 - 电源: | 1.7V ~ 1.9V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 165-LBGA |
| 供应商设备包: | 165-FBGA (13x15) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IS43R16320E-6BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 60TFBGA |
|
CY7C1414SV18-250BZCRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
23K640-E/PRoving Networks / Microchip Technology |
IC SRAM 64KBIT SPI 20MHZ 8DIP |
|
DS1230Y-85+Maxim Integrated |
IC NVSRAM 256KBIT PAR 28EDIP |
|
93LC46A-E/SNRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8SOIC |
|
W25Q64JVTCIQWinbond Electronics Corporation |
IC FLASH 64MBIT SPI/QUAD 24TFBGA |
|
IS61WV51216EDALL-20BLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 8MBIT PARALLEL 48TFBGA |
|
GS8128218GD-250IGSI Technology |
IC SRAM 144MBIT PAR 165FPBGA |
|
CY7C1313AV18-200BZCRochester Electronics |
QDR SRAM, 1MX18, 0.45NS |
|
IS45S16800F-7BLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 54TFBGA |
|
CY7C1612KV18-250BZXCRochester Electronics |
IC SRAM 144MBIT PARALLEL 165FBGA |
|
24C02CT-E/MSRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 100KHZ 8MSOP |
|
FM24C02ULZM8Rochester Electronics |
IC EEPROM 2KBIT I2C 100KHZ 8SO |