类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Discontinued at Digi-Key |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 2Kb (256 x 8) |
内存接口: | I²C |
时钟频率: | 1 MHz |
写周期时间 - 字,页: | 5ms |
访问时间: | 550 ns |
电压 - 电源: | 1.8V ~ 5.5V |
工作温度: | -40°C ~ 85°C |
安装类型: | Through Hole |
包/箱: | 8-DIP (0.300", 7.62mm) |
供应商设备包: | 8-DIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CAT25512VI-GT3Sanyo Semiconductor/ON Semiconductor |
IC EEPROM 512KBIT SPI 8SOIC |
|
MT41K512M8DA-107 AAT:PMicron Technology |
IC DRAM 4GBIT PARALLEL 78FBGA |
|
HN58V256ATI12ERochester Electronics |
256K SERIAL EEPROM |
|
7140LA55CBRenesas Electronics America |
IC SRAM 8KBIT PARALLEL SB48 |
|
11LC040-E/PRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SINGLE WIRE 8DIP |
|
BR93H46RFJ-2CE2ROHM Semiconductor |
IC EEPROM 1KBIT SPI 2MHZ 8SOPJ |
|
93AA86A-I/SNRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 3MHZ 8SOIC |
|
SST39VF1602C-70-4I-MAQERoving Networks / Microchip Technology |
IC FLASH 16MBIT PARALLEL 48WFBGA |
|
IS42VM32800K-6BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 90TFBGA |
|
IS21ES08G-JCLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 64GBIT EMMC 153VFBGA |
|
70V3569S5BF8Renesas Electronics America |
IC SRAM 576KBIT PAR 208CABGA |
|
S-24CS64A0I-T8T1GABLIC U.S.A. Inc. |
IC EEPROM 64KBIT I2C 8TSSOP |
|
IS61WV25616EDALL-20BLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 48TFBGA |