类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 4Mb (512K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 17ns |
访问时间: | 17 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 36-BSOJ (0.400", 10.16mm Width) |
供应商设备包: | 36-SOJ |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT55L256L18F1T-12TRRochester Electronics |
SRAM 3.3V 4M-BIT 256KX18 9NS |
|
MT57V1MH18EF-6Rochester Electronics |
DDR SRAM, 1MX18, 3NS, CMOS, PBGA |
|
AF016GEC5A-2001EXATP Electronics, Inc. |
IC 16GBIT 153BGA |
|
S25FL064LABMFV000Cypress Semiconductor |
IC FLASH 64MBIT SPI/QUAD 16SOIC |
|
71V3556SA166BGGIRochester Electronics |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
25LC160BT-I/SNRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 10MHZ 8SOIC |
|
041841WKAB-3Rochester Electronics |
256KX18 SRAM |
|
CY7C1312CV18-250BZCRochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
CY7C1460KVE33-167AXICypress Semiconductor |
IC SRAM 36MBIT PARALLEL 100TQFP |
|
CY7C291L-35WCRochester Electronics |
UVPROM, 2KX8, 35NS, CMOS |
|
CY7C1354S-166BGCRochester Electronics |
IC SRAM 9MBIT PARALLEL 119PBGA |
|
CY7C1386B-167BGCRochester Electronics |
CACHE SRAM, 512KX36, 3.4NS |
|
24LCS52/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8SOIC |