类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
内存类型: | - |
内存格式: | - |
技术: | - |
内存大小: | - |
内存接口: | - |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | - |
工作温度: | - |
安装类型: | - |
包/箱: | - |
供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY7C1312CV18-250BZCRochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
CY7C1460KVE33-167AXICypress Semiconductor |
IC SRAM 36MBIT PARALLEL 100TQFP |
|
CY7C291L-35WCRochester Electronics |
UVPROM, 2KX8, 35NS, CMOS |
|
CY7C1354S-166BGCRochester Electronics |
IC SRAM 9MBIT PARALLEL 119PBGA |
|
CY7C1386B-167BGCRochester Electronics |
CACHE SRAM, 512KX36, 3.4NS |
|
24LCS52/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8SOIC |
|
IS29GL128-70SLETISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 128MBIT PAR 56TSOP I |
|
AT28BV64B-20SU-TRoving Networks / Microchip Technology |
IC EEPROM 64KBIT PARALLEL 28SOIC |
|
CY7C1320KV18-250BZXICypress Semiconductor |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
MT55L256L32PF-10Rochester Electronics |
ZBT SRAM, 256KX32, 5NS, CMOS, PB |
|
EDB2432B4MA-1DAAT-F-DMicron Technology |
IC DRAM 2GBIT PARALLEL 134VFBGA |
|
S26KS256SDPBHI020Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 24FBGA |
|
70V657S12BF8Renesas Electronics America |
IC SRAM 1.125MBIT PAR 208CABGA |