类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NAND (SLC) |
内存大小: | 4Gb (512M x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 25ns |
访问时间: | 25 ns |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 63-VFBGA |
供应商设备包: | 63-TFBGA (9x11) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
GS81313LQ18GK-800IGSI Technology |
IC SRAM 144MBIT PARALLEL 260BGA |
|
70V631S12BCI8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 256CABGA |
|
CY14B104NA-ZS45XECypress Semiconductor |
IC NVSRAM 4MBIT PAR 44TSOP II |
|
CY7C1011CV33-12BVIRochester Electronics |
STANDARD SRAM, 128KX16 |
|
S25FL127SABNFI103Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 8WSON |
|
AS7C4098A-20JCNAlliance Memory, Inc. |
IC SRAM 4MBIT PARALLEL 44SOJ |
|
CAT24C01YI-GRochester Electronics |
IC EEPROM 1KBIT I2C 8TSSOP |
|
CY7C1021V33L-15BACTRochester Electronics |
STANDARD SRAM, 64KX16, 15NS |
|
CY62157DV20L-70BVXIRochester Electronics |
SRAM CHIP ASYNC SINGLE 1.8V 8M B |
|
24FC1025T-I/SNRoving Networks / Microchip Technology |
IC EEPROM 1MBIT I2C 1MHZ 8SOIC |
|
CY14B512I-SFXIRochester Electronics |
IC NVSRAM 512KBIT I2C 16SOIC |
|
24AA128T-I/SNRoving Networks / Microchip Technology |
IC EEPROM 128KBIT I2C 8SOIC |
|
CY7C1415BV18-250BZCRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |