类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 288Kb (32K x 9) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 15ns |
访问时间: | 15 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 32-BSOJ (0.300", 7.62mm Width) |
供应商设备包: | 32-SOJ |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS25WP016D-JBLE-TRISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 16MBIT SPI/QUAD 8SOIC |
|
24LC014T-E/SNRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 400KHZ 8SOIC |
|
BR93G46F-3BGTE2ROHM Semiconductor |
IC EEPROM 1KBIT SPI 3MHZ 8SOP |
|
24LC16B/SNRoving Networks / Microchip Technology |
IC EEPROM 16KBIT I2C 8SOIC |
|
BR93A86RFJ-WME2ROHM Semiconductor |
IC EEPROM 16KBIT SPI 2MHZ 8SOPJ |
|
IS43DR82560C-25DBLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 60TWBGA |
|
S29AL008J70TFN023Cypress Semiconductor |
IC FLASH 8MBIT PARALLEL 48TSOP |
|
MT29F128G08CFABBWP-12IT:BMicron Technology |
IC FLASH 128GBIT PAR 48TSOP I |
|
MT29F512G08EBHAFJ4-3T:AMicron Technology |
IC FLASH 512GBIT PAR 132VBGA |
|
SST25WF080B-40I/SNRoving Networks / Microchip Technology |
IC FLASH 8MBIT SPI 40MHZ 8SOIC |
|
AS7C4098A-12TINTRAlliance Memory, Inc. |
IC SRAM 4MBIT PARALLEL 44TSOP2 |
|
N25Q064A13EF8H0EAlliance Memory, Inc. |
IC FLSH 64MBIT SPI 108MHZ 8VDFPN |
|
CY7C25652KV18-400BZIRochester Electronics |
QDR SRAM, 2MX36, 0.45NS PBGA165 |