English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - DDR3 |
| 内存大小: | 4Gb (256M x 16) |
| 内存接口: | Parallel |
| 时钟频率: | 933 MHz |
| 写周期时间 - 字，页: | 15ns |
| 访问时间: | 20 ns |
| 电压 - 电源: | 1.425V ~ 1.575V |
| 工作温度: | -40°C ~ 95°C (TC) |
| 安装类型: | Surface Mount |
| 包/箱: | 96-TFBGA |
| 供应商设备包: | 96-FBGA (7.5x13.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CY7C1021BNV33L-15ZXIRochester Electronics |
STANDARD SRAM, 64KX16, 15NS PDSO |
|
CY7C1020BN-12VXCRochester Electronics |
IC SRAM 512KBIT PARALLEL 44SOJ |
|
FEMC004GTTG7-T13-16Flexxon |
IC FLASH 32GBIT EMMC 100FBGA |
|
BR93L66RFJ-WE2ROHM Semiconductor |
IC EEPROM 4KBIT SPI 2MHZ 8SOPJ |
|
W25Q32JVTBIQ TRWinbond Electronics Corporation |
IC FLASH 32MBIT SPI/QUAD 24TFBGA |
|
S29GL01GS10FHSS13Cypress Semiconductor |
IC FLASH 1GBIT PARALLEL 64FBGA |
|
HM6-6642/883Rochester Electronics |
512 X 8 CMOS PROM |
|
BR25S640FJ-WE2ROHM Semiconductor |
IC EEPROM 64KBIT SPI 20MHZ 8SOPJ |
|
S25FS512SDSBHI213Cypress Semiconductor |
IC FLASH 512MBIT SPI/QUAD 24BGA |
|
IS43DR16160B-37CBLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 84TWBGA |
|
BR24G08FVT-3AGE2ROHM Semiconductor |
IC EEPROM 8K I2C 1MHZ 8TSSOP |
|
CYD18S72V-133BBCRochester Electronics |
IC SRAM 18MBIT PARALLEL 484FBGA |
|
7005L20JGIRenesas Electronics America |
IC SRAM 64KBIT PARALLEL 68PLCC |
