类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, SDR (ZBT) |
内存大小: | 18Mb (512K x 36) |
内存接口: | Parallel |
时钟频率: | 100 MHz |
写周期时间 - 字,页: | - |
访问时间: | 5 ns |
电压 - 电源: | 2.375V ~ 2.625V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 119-BGA |
供应商设备包: | 119-PBGA (14x22) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS42SM16160K-75BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 54TFBGA |
|
CAT28LV64H13-20Rochester Electronics |
IC EEPROM 64KBIT PARALLEL 28TSOP |
|
GS82582Q19GE-400IGSI Technology |
IC SRAM 288MBIT PAR 165FPBGA |
|
71V3559S80PFGIRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
AS7C3256A-20JINTRAlliance Memory, Inc. |
IC SRAM 256KBIT PARALLEL 28SOJ |
|
CY62137FV30LL-55ZSXERochester Electronics |
IC SRAM 2MBIT PARALLEL 44TSOP II |
|
BR24T16-WZROHM Semiconductor |
IC EEPROM 16KBIT I2C DIP8K |
|
24AA16T-I/SNRoving Networks / Microchip Technology |
IC EEPROM 16KBIT I2C 8SOIC |
|
AT28C256-25UM/883Roving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 28CPGA |
|
S29GL128S90FHI023Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 64FBGA |
|
IS45S16320F-7TLA2ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 54TSOP II |
|
CY62256NLL-55ZXETRochester Electronics |
IC SRAM 256KBIT PAR 28TSOP I |
|
BR24L02F-WE2ROHM Semiconductor |
IC EEPROM 2KBIT I2C 400KHZ 8SOP |