English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - DDR3L |
| 内存大小: | 4Gb (256M x 16) |
| 内存接口: | Parallel |
| 时钟频率: | 933 MHz |
| 写周期时间 - 字，页: | 15ns |
| 访问时间: | 20 ns |
| 电压 - 电源: | 1.283V ~ 1.45V |
| 工作温度: | -40°C ~ 95°C (TC) |
| 安装类型: | Surface Mount |
| 包/箱: | 96-TFBGA |
| 供应商设备包: | 96-FBGA (9x13.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
7007L20JGIRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 68PLCC |
|
S25FL256SDPNFV003Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 8WSON |
|
BR25S320FVJ-WE2ROHM Semiconductor |
IC EEPROM 32K SPI 20MHZ 8TSSOP |
|
71V321S35JRochester Electronics |
IC SRAM 16KBIT PARALLEL 52PLCC |
|
IS61LF102418B-6.5TQLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 100LQFP |
|
M24C04-WDW6TPSTMicroelectronics |
IC EEPROM 4KBIT I2C 8TSSOP |
|
S25FL064LABMFA003Cypress Semiconductor |
IC FLASH 64MBIT SPI/QUAD 16SOIC |
|
CY7C1012DV33-10BGXIRochester Electronics |
STANDARD SRAM, 512KX24, 10NS PBG |
|
71V3557S80BGIRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
AS4C2M32S-7BCNTRAlliance Memory, Inc. |
IC DRAM 64MBIT PARALLEL 90TFBGA |
|
W25Q128JWSIM TRWinbond Electronics Corporation |
IC FLASH 128MBIT SPI/QUAD 8SOIC |
|
UPD44325084BF5-E33-FQ1Rochester Electronics |
QDR SRAM, 4MX8, 0.45NS |
|
70V9279L7PRFGI8Renesas Electronics America |
IC SRAM 512KBIT PARALLEL 128TQFP |
