类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 1Kb (128 x 8 , 64 x 16) |
内存接口: | SPI |
时钟频率: | 3 MHz |
写周期时间 - 字,页: | 6ms |
访问时间: | - |
电压 - 电源: | 2.5V ~ 5.5V |
工作温度: | -40°C ~ 125°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
25AA320A-I/STRoving Networks / Microchip Technology |
IC EEPROM 32KBIT SPI 8TSSOP |
|
BR24G04FVM-3GTTRROHM Semiconductor |
IC EEPROM 4KBIT I2C 400KHZ 8MSOP |
|
70V3579S5BCRenesas Electronics America |
IC SRAM 1.125MBIT PAR 256CABGA |
|
MT58L1MY18FT-6.8Rochester Electronics |
CACHE SRAM, 1MX18, 6.8NS, CMOS, |
|
7024L20JGIRenesas Electronics America |
IC SRAM 64KBIT PARALLEL 84PLCC |
|
AT45DB641E-MHN-TAdesto Technologies |
IC FLASH 64MBIT SPI 85MHZ 8UDFN |
|
CY27H512-45JCRochester Electronics |
OTP ROM, 64KX8, 45NS PQCC32 |
|
71V3576S150PFIRochester Electronics |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
GD25VQ40CTIGGigaDevice |
IC FLASH 4MBIT SPI/QUAD I/O 8SOP |
|
S29GL512T11DHV020Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 64FBGA |
|
GVT71128E36T-8Rochester Electronics |
IC SRAM 4MBIT 100MHZ |
|
S29GL064N90TFI020Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 56TSOP |
|
IS43LR32160B-6BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 90TFBGA |