类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH |
内存大小: | 16Mb (2M x 8) |
内存接口: | SPI - Quad I/O |
时钟频率: | 108 MHz |
写周期时间 - 字,页: | 50µs, 2.4ms |
访问时间: | - |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
UPD44645182AF5-E50-FQ1Rochester Electronics |
STANDARD SRAM, 4MX18, 0.45NS |
|
S29GL128S10DHV010Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 64FBGA |
|
M95M01-DFDW6TPSTMicroelectronics |
IC EEPROM 1MBIT SPI 16MHZ 8TSSOP |
|
AT21CS11-SSH10-TRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 125KHZ 8SOIC |
|
S25FL128SDSMFBG10Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 16SOIC |
|
CY7C2663KV18-550BZXCRochester Electronics |
QDR SRAM, 8MX18, 0.45NS PBGA165 |
|
IS46R16320D-6TLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 66TSOP II |
|
CY7C1381C-100BGCRochester Electronics |
STANDARD SRAM, 512KX36, 8.5NS |
|
CAV24C512WE-GT3Sanyo Semiconductor/ON Semiconductor |
IC EEPROM 512KBIT I2C 1MHZ 8SOIC |
|
GS8182Q36BGD-300IGSI Technology |
IC SRAM 18MBIT PARALLEL 165FPBGA |
|
CY7C1381D-100AXCRochester Electronics |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
S29GL01GS11DHIV13Cypress Semiconductor |
IC FLASH 1GBIT PARALLEL 64FBGA |
|
NV24C64MUW3VLTBGSanyo Semiconductor/ON Semiconductor |
IC EEPROM 64KBIT I2C 1MHZ 8UDFN |