English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Asynchronous |
| 内存大小: | 1Mb (256K x 4) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 20ns |
| 访问时间: | 20 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 28-BSOJ (0.300", 7.62mm Width) |
| 供应商设备包: | 28-SOJ |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BR24G08FVJ-3AGTE2ROHM Semiconductor |
IC EEPROM 8KBIT I2C 1MHZ 8TSSOP |
|
NV24C64DWVLT3GSanyo Semiconductor/ON Semiconductor |
IC EEPROM 64K I2C 1MHZ 8SOIC |
|
CY14MB064Q1A-SXIRochester Electronics |
NON-VOLATILE SRAM, 8KX8, CMOS, P |
|
71V3556SA100BQGIRenesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
SFEM016GB1EA1TO-I-GE-111-E08Swissbit |
IC FLASH 64GBIT EMMC 153BGA |
|
47L16T-I/SNRoving Networks / Microchip Technology |
IC EERAM 16KBIT I2C 1MHZ 8SOIC |
|
AS4C256M16D3LC-12BCNAlliance Memory, Inc. |
IC DRAM 4GBIT PARALLEL 96FBGA |
|
S-93L46AD0I-T8T1UABLIC U.S.A. Inc. |
IC EEPROM 1KBIT SPI 2MHZ 8TSSOP |
|
CY62177EV30LL-55ZXITCypress Semiconductor |
IC SRAM 32MBIT PARALLEL 48TSOP I |
|
24LC512T-E/MFRoving Networks / Microchip Technology |
IC EEPROM 512KBIT I2C 8DFN |
|
UPD46364182BF1-E33-EQ1-ARochester Electronics |
DDR SRAM, 2MX18, 0.45NS |
|
CY7C1312SV18-167BZCRochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
CAT28LV64T13A-25Rochester Electronics |
IC EEPROM 64KBIT PARALLEL 28TSOP |
