类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | NVSRAM |
技术: | NVSRAM (Non-Volatile SRAM) |
内存大小: | 64Kb (8K x 8) |
内存接口: | SPI |
时钟频率: | 40 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
71V3556SA100BQGIRenesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
SFEM016GB1EA1TO-I-GE-111-E08Swissbit |
IC FLASH 64GBIT EMMC 153BGA |
|
47L16T-I/SNRoving Networks / Microchip Technology |
IC EERAM 16KBIT I2C 1MHZ 8SOIC |
|
AS4C256M16D3LC-12BCNAlliance Memory, Inc. |
IC DRAM 4GBIT PARALLEL 96FBGA |
|
S-93L46AD0I-T8T1UABLIC U.S.A. Inc. |
IC EEPROM 1KBIT SPI 2MHZ 8TSSOP |
|
CY62177EV30LL-55ZXITCypress Semiconductor |
IC SRAM 32MBIT PARALLEL 48TSOP I |
|
24LC512T-E/MFRoving Networks / Microchip Technology |
IC EEPROM 512KBIT I2C 8DFN |
|
UPD46364182BF1-E33-EQ1-ARochester Electronics |
DDR SRAM, 2MX18, 0.45NS |
|
CY7C1312SV18-167BZCRochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
CAT28LV64T13A-25Rochester Electronics |
IC EEPROM 64KBIT PARALLEL 28TSOP |
|
W9725G8KB-18Winbond Electronics Corporation |
IC DRAM 256MBIT PARALLEL 60WBGA |
|
S25FS128SAGNFI003Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 8WSON |
|
71V67603S133PFIRochester Electronics |
IC SRAM 9MBIT PARALLEL 100TQFP |