类型 | 描述 |
---|---|
系列: | SYNCBURST™ |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous |
内存大小: | 1Mb (64K x 18) |
内存接口: | Parallel |
时钟频率: | 100 MHz |
写周期时间 - 字,页: | - |
访问时间: | 8.5 ns |
电压 - 电源: | 3.135V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 100-LQFP |
供应商设备包: | 100-TQFP (14x20.1) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS46R16160F-6TLA1-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 66TSOP II |
|
CY7C1393BV18-250BZIRochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
M24C16-WMN6TPSTMicroelectronics |
IC EEPROM 16KBIT I2C 400KHZ 8SO |
|
24CW320T-I/SNRoving Networks / Microchip Technology |
IC EEPROM 32KBIT I2C 1MHZ 8SOIC |
|
S29GL064S80DHV023Rochester Electronics |
IC FLASH 64MBIT PARALLEL 64FBGA |
|
CY7C109BNL-15VCTRochester Electronics |
SRAM 1M-BIT 128K X 8 15NS |
|
7025L20PFGI8Renesas Electronics America |
IC SRAM 128KBIT PARALLEL 100TQFP |
|
IS42S16160J-7BL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 54TFBGA |
|
5962-8670302FARochester Electronics |
OTP ROM, 32X8, 35NS |
|
FM24C02ULVM8Rochester Electronics |
IC EEPROM 2KBIT I2C 100KHZ 8SO |
|
STK15C88-SF45Rochester Electronics |
NON-VOLATILE SRAM, 32KX8, 45NS P |
|
7164S20DBRochester Electronics |
IC SRAM 64KBIT PARALLEL 28CERDIP |
|
S29GL064N90FFI030ARochester Electronics |
IC FLASH 64MBIT PARALLEL 64FBGA |