类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM |
内存大小: | 128Mb (4M x 32) |
内存接口: | Parallel |
时钟频率: | 166 MHz |
写周期时间 - 字,页: | - |
访问时间: | 5.4 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 90-TFBGA |
供应商设备包: | 90-TFBGA (8x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT25QU01GBBB8E12-0AATMicron Technology |
IC FLSH 1GBIT SPI 133MHZ 24TPBGA |
|
24LC01BH-E/STRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 8TSSOP |
|
25LC040A-E/PRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 10MHZ 8DIP |
|
AT25FF081A-UUN-TAdesto Technologies |
IC FLASH 8MBIT SPI/QUAD 8WLCSP |
|
93LC56CT-I/STRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 3MHZ 8TSSOP |
|
FEMC032GBE-TC40Flexxon |
IC FLASH 256GBIT EMMC 153FBGA |
|
24LC01BH-E/PRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 400KHZ 8DIP |
|
CAT25M01VE-GT3Rochester Electronics |
IC EEPROM 1MBIT SPI 10MHZ 8SOIC |
|
71V65603S100PFGRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
SST26WF080BT-104I/SNRoving Networks / Microchip Technology |
IC FLASH 8MBIT SPI/QUAD 8SOIC |
|
25LC160CT-I/MNYRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 10MHZ 8TDFN |
|
70T3599S166BC8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 256CABGA |
|
W9425G6KH-5I TRWinbond Electronics Corporation |
IC DRAM 256MBIT PAR 66TSOP II |