类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - DDR3L |
内存大小: | 8Gb (512M x 16) |
内存接口: | Parallel |
时钟频率: | 800 MHz |
写周期时间 - 字,页: | - |
访问时间: | 20 ns |
电压 - 电源: | 1.283V ~ 1.45V |
工作温度: | -40°C ~ 95°C (TC) |
安装类型: | Surface Mount |
包/箱: | 96-TFBGA |
供应商设备包: | 96-TWBGA (10x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
93C56C-E/PRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 3MHZ 8DIP |
|
7130SA35CBRenesas Electronics America |
IC SRAM 8KBIT PARALLEL SB48 |
|
IS61C6416AL-12TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 1MBIT PARALLEL 44TSOP II |
|
CAT24WC256X-1.8Rochester Electronics |
IC EEPROM 256KBIT I2C 1MHZ 8SOIC |
|
CY62136FV30LL-45ZSXATRochester Electronics |
IC SRAM 2MBIT PARALLEL 44TSOP II |
|
S29GL032N90FFI042Cypress Semiconductor |
IC FLASH 32MBIT PARALLEL 64FBGA |
|
S29GL128S13FAEV13Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 64FBGA |
|
BR24T16FVT-WE2ROHM Semiconductor |
IC EEPROM 16KBIT I2C 8TSSOP |
|
GD25D05CTIGGigaDevice |
IC FLASH 512KBIT SPI/DUAL 8SOP |
|
IS43R16160F-6BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 60TFBGA |
|
CY7C1381KVE33-133AXITCypress Semiconductor |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
7142LA35CBRenesas Electronics America |
IC SRAM 16KBIT PARALLEL SB48 |
|
BR24G02FJ-3AGTE2ROHM Semiconductor |
IC EEPROM 2KBIT I2C 1MHZ 8SOPJ |