类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
内存类型: | - |
内存格式: | - |
技术: | - |
内存大小: | - |
内存接口: | - |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | - |
工作温度: | - |
安装类型: | - |
包/箱: | - |
供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AS4C128M32MD2A-25BINTRAlliance Memory, Inc. |
IC DRAM 4GBIT PARALLEL 134FBGA |
|
71V3556SA166BQ8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
25LC080T-I/SNRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 2MHZ 8SOIC |
|
GS816036DGT-333IGSI Technology |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
W9425G6KH-5 TRWinbond Electronics Corporation |
IC DRAM 256MBIT PAR 66TSOP II |
|
MT58L256L32FT-10Rochester Electronics |
IC SRAM 8MBIT PARALLEL 100TQFP |
|
71V65703S80BQGIRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 165CABGA |
|
11AA02E48T-I/TTRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SGL WIRE SOT23-3 |
|
25LC1024T-E/MFRoving Networks / Microchip Technology |
IC EEPROM 1MBIT SPI 20MHZ 8DFN |
|
GS880Z36CGT-250IVGSI Technology |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
IS61LPS25636A-200TQLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
71V67603S133BGI8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 119PBGA |
|
25LC160A-E/PRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 10MHZ 8DIP |