类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, SDR (ZBT) |
内存大小: | 4.5Mb (128K x 36) |
内存接口: | Parallel |
时钟频率: | 166 MHz |
写周期时间 - 字,页: | - |
访问时间: | 3.5 ns |
电压 - 电源: | 3.135V ~ 3.465V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 165-TBGA |
供应商设备包: | 165-CABGA (13x15) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
25LC080T-I/SNRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 2MHZ 8SOIC |
|
GS816036DGT-333IGSI Technology |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
W9425G6KH-5 TRWinbond Electronics Corporation |
IC DRAM 256MBIT PAR 66TSOP II |
|
MT58L256L32FT-10Rochester Electronics |
IC SRAM 8MBIT PARALLEL 100TQFP |
|
71V65703S80BQGIRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 165CABGA |
|
11AA02E48T-I/TTRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SGL WIRE SOT23-3 |
|
25LC1024T-E/MFRoving Networks / Microchip Technology |
IC EEPROM 1MBIT SPI 20MHZ 8DFN |
|
GS880Z36CGT-250IVGSI Technology |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
IS61LPS25636A-200TQLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
71V67603S133BGI8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 119PBGA |
|
25LC160A-E/PRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 10MHZ 8DIP |
|
24LC64T-I/SMRoving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C 8SOIJ |
|
SST26VF064B-104V/SMRoving Networks / Microchip Technology |
IC FLASH 64MBIT SPI/QUAD 8SOIJ |