English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Synchronous, SDR |
| 内存大小: | 2Mb (256K x 8) |
| 内存接口: | SPI - Quad I/O, SDI, DTR |
| 时钟频率: | 20 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | - |
| 电压 - 电源: | 2.2V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
| 供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
W978H2KBVX2IWinbond Electronics Corporation |
IC DRAM 256MBIT PAR 134VFBGA |
|
MX25L25645GZ2I-08GMacronix |
IC FLSH 256MBIT SPI 120MHZ 8WSON |
|
HN27C4001G10Rochester Electronics |
UV EPROM, 512KX8, 100NS |
|
CY7C109BN-12ZCRochester Electronics |
STANDARD SRAM, 128KX8 |
|
AT27C040-70JURoving Networks / Microchip Technology |
IC EPROM 4MBIT PARALLEL 32PLCC |
|
CY7C1041CV33-10BACRochester Electronics |
STANDARD SRAM, 256KX16 |
|
GD25LQ128DYIGRGigaDevice |
IC FLASH 128MBIT SPI/QUAD 8WSON |
|
MT29F384G08EBHBBJ4-3R:BMicron Technology |
IC FLASH 384GBIT PAR 132VBGA |
|
AT28C010E-15JURoving Networks / Microchip Technology |
IC EEPROM 1MBIT PARALLEL 32PLCC |
|
IS46R16160F-6TLA2ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 66TSOP II |
|
CY7C1474V33-167BGCRochester Electronics |
IC SRAM 72MBIT PARALLEL 209FBGA |
|
71V424L12YGRenesas Electronics America |
IC SRAM 4MBIT PARALLEL 36SOJ |
|
71V65803S150BGI8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 119PBGA |
