类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NAND |
内存大小: | 2Gb (128M x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 1.7V ~ 1.95V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 63-VFBGA |
供应商设备包: | 63-VFBGA (10.5x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY7C1041BV33-15VIRochester Electronics |
STANDARD SRAM, 256KX16, 15NS |
|
CY7C1414KV18-300BZXCCypress Semiconductor |
NO WARRANTY |
|
CY7C09199V-7ACRochester Electronics |
DUAL-PORT SRAM, 128KX9, 18NS |
|
GS81302DT38AGD-633IGSI Technology |
IC SRAM 144MBIT PAR 165FPBGA |
|
AS4C16M16SA-7TCNAlliance Memory, Inc. |
IC DRAM 256MBIT PAR 54TSOP II |
|
93LC56BX/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 2MHZ 8SOIC |
|
MT46V64M8CV-5B IT:JAlliance Memory, Inc. |
IC DRAM 512MBIT PARALLEL 60FBGA |
|
CAT28F001HI-12TRochester Electronics |
IC FLASH 1MBIT PARALLEL 32TSOP |
|
CY7C1041G30-10ZSXICypress Semiconductor |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
8103610SARochester Electronics |
8103610 - OT PLD, 30NS |
|
BR24C01-RDS6TPROHM Semiconductor |
IC EEPROM 1KBIT I2C 8TSSOP |
|
11AA02UIDT-I/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SGL WIRE 8SOIC |
|
AS7C31025B-12JINAlliance Memory, Inc. |
IC SRAM 1MBIT PARALLEL 32SOJ |