English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bag |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Synchronous, SDR |
| 内存大小: | 9Mb (512K x 18) |
| 内存接口: | Parallel |
| 时钟频率: | 166 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 3.5 ns |
| 电压 - 电源: | 3.135V ~ 3.6V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 100-LQFP |
| 供应商设备包: | 100-TQFP (14x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BQ2022LPRRochester Electronics |
IC EPROM 1KBIT SGL WIRE TO92-3 |
|
CY7C09369V-6AXCRochester Electronics |
IC SRAM 288KBIT PARALLEL 100TQFP |
|
CY7C0851AV-167BBXCRochester Electronics |
IC SRAM 2MBIT PARALLEL 172FBGA |
|
24FC16H-I/SNRoving Networks / Microchip Technology |
IC EEPROM 16KBIT I2C 1MHZ 8SOIC |
|
BR24G32FJ3AGTE2TRROHM Semiconductor |
IC EEPROM 32KBIT I2C 1MHZ 8SOPJ |
|
IS61QDP2B22M18A-333M3LISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 36MBIT PARALLEL 165LFBGA |
|
CY7C1325B-100BCRochester Electronics |
256K X 18 SYNCHRONOUS CACHE RAM |
|
MT28EW256ABA1LPC-0SIT TRMicron Technology |
IC FLASH 256MBIT PARALLEL 64LBGA |
|
S29GL032N11FFIS10Cypress Semiconductor |
IC FLASH 32MBIT PARALLEL 64FBGA |
|
S25FL256LAGBHI033Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 24BGA |
|
71T016SA15PHRochester Electronics |
2.5V SRAM 1 MEG (64K X 16-BIT) |
|
93LC46BT-I/MSRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8MSOP |
|
AS4C8M16D1A-5TINAlliance Memory, Inc. |
IC DRAM 128MBIT PAR 66TSOP II |
