English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Synchronous, SDR |
| 内存大小: | 4.5Mb (128K x 36) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | - |
| 访问时间: | 8.5 ns |
| 电压 - 电源: | 3.135V ~ 3.465V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 100-LQFP |
| 供应商设备包: | 100-TQFP (14x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IS64WV3216BLL-15CTLA3ISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 512KBIT PAR 44TSOP II |
|
SST26VF064B-104I/MFRoving Networks / Microchip Technology |
IC FLASH 64MBIT SPI/QUAD 8WDFN |
|
IS61VVF409618B-7.5TQL-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 72MBIT PARALLEL 100LQFP |
|
CY7C293A-25PCRochester Electronics |
OTP ROM, 2KX8, 25NS |
|
FM24V02A-GCypress Semiconductor |
IC FRAM 256KBIT I2C 3.4MHZ 8SOIC |
|
CAT24C128YIGT3JNRochester Electronics |
IC EEPROM 128KBIT I2C 8TSSOP |
|
IS61WV6416EEBLL-10TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 1MBIT PARALLEL 44TSOP II |
|
24AA64-I/SNRoving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C 8SOIC |
|
MT29F512G08CMCEBJ4-37ITR:EMicron Technology |
IC FLASH 512GBIT PAR 132VBGA |
|
24FC16-I/PRoving Networks / Microchip Technology |
IC EEPROM 16KBIT I2C 1MHZ 8DIP |
|
7164S25YG8Renesas Electronics America |
IC SRAM 64KBIT PARALLEL 28SOJ |
|
CY7C1548KV18-400BZIRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
CAT24C02LIRochester Electronics |
IC EEPROM 2KBIT I2C 400KHZ 8DIP |
