English
简体中文
XTAL OSC XO 13.0000MHZ HCMOS SMD
IC DRAM 512MBIT PARALLEL 84TWBGA
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Not For New Designs |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - DDR2 |
| 内存大小: | 512Mb (32M x 16) |
| 内存接口: | Parallel |
| 时钟频率: | 400 MHz |
| 写周期时间 - 字，页: | 15ns |
| 访问时间: | 400 ps |
| 电压 - 电源: | 1.7V ~ 1.9V |
| 工作温度: | -40°C ~ 105°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 84-TFBGA |
| 供应商设备包: | 84-TWBGA (8x12.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FM1105-GARochester Electronics |
IC FRAM SPI 1MHZ SOT23-8 |
|
CY7C1021B-15ZCTRochester Electronics |
STANDARD SRAM, 64KX16, 15NS |
|
CY7C1370SV25-200AXCRochester Electronics |
ZBT SRAM, 512KX36, 3NS PQFP100 |
|
CY7C1010DV33-10ZSXITCypress Semiconductor |
IC SRAM 2MBIT PARALLEL 44TSOP II |
|
71V016SA12YGRochester Electronics |
IC SRAM 1MBIT PARALLEL 44SOJ |
|
IS45S16800F-6TLA1-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PAR 54TSOP II |
|
71V3558SA166BQG8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
M95512-DFDW6TPSTMicroelectronics |
IC EEPROM 512KBIT SPI 8TSSOP |
|
24AA52T-I/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8SOIC |
|
X28C512JZ-12Rochester Electronics |
EEPROM, 64KX8, 5V, PARALLEL |
|
IS46DR16320D-3DBLA2ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 84TWBGA |
|
AT24C02D-PUMRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 1MHZ 8DIP |
|
MT29RZ4B2DZZHHWD-18I.84F TRMicron Technology |
IC FLASH RAM 4GBIT PAR 162VFBGA |