类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Dual Port, Asynchronous |
内存大小: | 512Kb (64K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 20ns |
访问时间: | 20 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 100-LQFP |
供应商设备包: | 100-TQFP (14x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
S25FL128SAGMFV010Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 16SOIC |
|
AS6C2008A-55SINTRAlliance Memory, Inc. |
IC SRAM 2MBIT PARALLEL 32SOP |
|
CY7C1380B-167ACRochester Electronics |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
MT53E128M32D2DS-053 AUT:A TRMicron Technology |
IC DRAM 4GBIT 1.866GHZ 200WFBGA |
|
71V3559S80PFRochester Electronics |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
CY7C1359A-150ACRochester Electronics |
CACHE TAG SRAM, 256KX18, 3.8NS |
|
MX60LF8G18AC-TIMacronix |
IC FLASH 8GBIT PARALLEL 48TSOP |
|
UPD44645092AF5-E40-FQ1-ARochester Electronics |
STANDARD SRAM, 8MX9, 0.45NS |
|
IS62LV256AL-45TLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 256KBIT PAR 28TSOP I |
|
23A512-I/STRoving Networks / Microchip Technology |
IC SRAM 512KBIT SPI/QUAD 8TSSOP |
|
IS42S16160J-6TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 54TSOP II |
|
S29GL256S10DHAV23Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 64FBGA |
|
CY7C1460AV33-167BZCRochester Electronics |
ZBT SRAM, 1MX36, 3.4NS, CMOS, PB |