English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Synchronous, SDR (ZBT) |
| 内存大小: | 4.5Mb (128K x 36) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | - |
| 访问时间: | 8 ns |
| 电压 - 电源: | 3.135V ~ 3.465V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 100-LQFP |
| 供应商设备包: | 100-TQFP (14x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CY7C1472BV33-200AXCRochester Electronics |
IC SRAM 72MBIT PARALLEL 100TQFP |
|
MX25L6406EM2I-12GMacronix |
IC FLASH 64MBIT SPI 86MHZ 8SOP |
|
CY7C1460AV25-250AXCRochester Electronics |
IC SRAM 36MBIT PARALLEL 100TQFP |
|
NV93C76BMUW3VTBGSanyo Semiconductor/ON Semiconductor |
IC EEPROM 8KBIT SPI 2MHZ 8UDFN |
|
SST39VF040-70-4I-WHERoving Networks / Microchip Technology |
IC FLASH 4MBIT PARALLEL 32TSOP |
|
IS42VM16320E-6BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 54TFBGA |
|
CY7C263-20WCRochester Electronics |
UVPROM, 8KX8, 20NS, CMOS |
|
25LC320A-H/SNRoving Networks / Microchip Technology |
IC EEPROM 32KBIT SPI 5MHZ 8SOIC |
|
MT29F2G01ABAGDWB-IT:G TRMicron Technology |
IC FLASH 2GBIT SPI 8UPDFN |
|
24AA08T/SNRoving Networks / Microchip Technology |
IC EEPROM 8KBIT I2C 400KHZ 8SOIC |
|
W631GU6MB-11Winbond Electronics Corporation |
IC DRAM 1GBIT PARALLEL 96VFBGA |
|
IS61NLP25636B-200TQLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 9MBIT PARALLEL 100LQFP |
|
S25FL032P0XMFB013Cypress Semiconductor |
IC FLASH 32MBIT SPI/QUAD 8SOIC |
