类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 8Kb (1K x 8) |
内存接口: | SPI |
时钟频率: | 3 MHz |
写周期时间 - 字,页: | 5ms |
访问时间: | - |
电压 - 电源: | 2.5V ~ 5.5V |
工作温度: | -40°C ~ 125°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
S26KS128SDPBHI020Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 24FBGA |
|
RMLV0408EGSB-4S2#HA0Rochester Electronics |
IC SRAM 4MBIT PARALLEL 32TSOP II |
|
71256SA12TPGRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 28DIP |
|
S25FL064LABBHN023Cypress Semiconductor |
IC FLASH 64MBIT SPI/QUAD 24BGA |
|
IS45S16320F-6TLA1-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 54TSOP II |
|
93AA56AT-I/STRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 2MHZ 8TSSOP |
|
GS8342TT37BGD-450IGSI Technology |
IC SRAM 36MBIT PARALLEL 165FPBGA |
|
71V3577S65PFG8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
AT45DB041E-MHN2B-TAdesto Technologies |
IC FLASH 4MBIT SPI 85MHZ 8UDFN |
|
SST39VF6402B-70-4C-B1KE-TRoving Networks / Microchip Technology |
IC FLASH 64MBIT PARALLEL 48TFBGA |
|
S29JL032H90TFI210Rochester Electronics |
FLASH, 2MX16, 90NS, PDSO48 |
|
HN58V65ATI10ERochester Electronics |
64K EEPROM (8KWORD X 8-BIT) |
|
S25FL064LABNFB043Cypress Semiconductor |
IC FLASH 64MBIT SPI/QUAD 8USON |