类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 256Kb (32K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 12ns |
访问时间: | 12 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Through Hole |
包/箱: | 28-DIP (0.300", 7.62mm) |
供应商设备包: | 28-PDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
S25FL064LABBHN023Cypress Semiconductor |
IC FLASH 64MBIT SPI/QUAD 24BGA |
|
IS45S16320F-6TLA1-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 54TSOP II |
|
93AA56AT-I/STRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 2MHZ 8TSSOP |
|
GS8342TT37BGD-450IGSI Technology |
IC SRAM 36MBIT PARALLEL 165FPBGA |
|
71V3577S65PFG8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
AT45DB041E-MHN2B-TAdesto Technologies |
IC FLASH 4MBIT SPI 85MHZ 8UDFN |
|
SST39VF6402B-70-4C-B1KE-TRoving Networks / Microchip Technology |
IC FLASH 64MBIT PARALLEL 48TFBGA |
|
S29JL032H90TFI210Rochester Electronics |
FLASH, 2MX16, 90NS, PDSO48 |
|
HN58V65ATI10ERochester Electronics |
64K EEPROM (8KWORD X 8-BIT) |
|
S25FL064LABNFB043Cypress Semiconductor |
IC FLASH 64MBIT SPI/QUAD 8USON |
|
CY14B104NA-ZSP25XITCypress Semiconductor |
IC NVSRAM 4MBIT PAR 54TSOP II |
|
R1LV0816ASB-7SI#S0Rochester Electronics |
IC SRAM 8MBIT PARALLEL 44TSOP II |
|
71V546S133PFRochester Electronics |
IC SRAM 4.5MBIT PARALLEL 100TQFP |