English
简体中文
IC DRAM 1GBIT PARALLEL 60TWBGA
EVAL BOARD FOR INA240
SENSOR REED SW SPST-NO W LEADS
POWER STUD BLOCK 3POS 400A 600V
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - DDR2 |
| 内存大小: | 1Gb (128M x 8) |
| 内存接口: | Parallel |
| 时钟频率: | 333 MHz |
| 写周期时间 - 字，页: | 15ns |
| 访问时间: | 450 ps |
| 电压 - 电源: | 1.7V ~ 1.9V |
| 工作温度: | 0°C ~ 85°C (TC) |
| 安装类型: | Surface Mount |
| 包/箱: | 60-TFBGA |
| 供应商设备包: | 60-TWBGA (8x10.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
GD25LQ10CTIGRGigaDevice |
IC FLASH 1MBIT SPI/QUAD I/O 8SOP |
|
IS34ML04G081-TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 4GBIT PARALLEL 48TSOP I |
|
S70KL1281DABHI020Cypress Semiconductor |
IC PSRAM 128MBIT PARALLEL 24FBGA |
|
R1LP0408CSP-5SI#B0Rochester Electronics |
IC SRAM 4MBIT PARALLEL 32SOP |
|
FM93C56LM8Rochester Electronics |
EEPROM, 128X16, SERIAL, CMOS |
|
NM93C56LNRochester Electronics |
IC EEPROM 2KBIT SPI 250KHZ 8DIP |
|
CY7C1512V18-200BZXCRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
25LC020A-I/STRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 10MHZ 8TSSOP |
|
70V7519S133BC8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 256CABGA |
|
CY62128EV30LL-45ZAXARochester Electronics |
IC SRAM 1MBIT PARALLEL 32STSOP |
|
25LC512-I/MFRoving Networks / Microchip Technology |
IC EEPROM 512KBIT SPI 20MHZ 8DFN |
|
RMLV0808BGSB-4S2#AA0Renesas Electronics America |
IC SRAM 8MBIT PARALLEL 44TSOP II |
|
S26KS512SDABHM030Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 24FBGA |