English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | NoBL™ |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Synchronous, SDR |
| 内存大小: | 18Mb (512K x 36) |
| 内存接口: | Parallel |
| 时钟频率: | 200 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 3 ns |
| 电压 - 电源: | 3.135V ~ 3.6V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 119-BGA |
| 供应商设备包: | 119-PBGA (14x22) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
S29GL064N11FFIS12Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 64FBGA |
|
93C46B/SNRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8SOIC |
|
25AA010AT-I/MSRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 10MHZ 8MSOP |
|
IS43LR32100D-6BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 32MBIT PARALLEL 90TFBGA |
|
CY62157EV30LL-55ZXETCypress Semiconductor |
IC SRAM 8MBIT PARALLEL 48TSOP I |
|
70T3319S133BFRenesas Electronics America |
IC SRAM 4.5MBIT PAR 208CABGA |
|
M48Z58Y-70PC1STMicroelectronics |
IC NVSRAM 64KBIT PAR 28PCDIP |
|
70T651S10BFRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 208FPBGA |
|
CY7C144E-15JXIRochester Electronics |
IC SRAM 64KBIT PARALLEL 68PLCC |
|
CY7C1049BV33-12VITRochester Electronics |
STANDARD SRAM, 512KX8, 12NS |
|
PC28F512P33BFDAlliance Memory, Inc. |
IC FLASH 512MBIT PARALLEL 64LBGA |
|
S25FL256SDPMFV003Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 16SOIC |
|
AT25XE011-SSHN-TAdesto Technologies |
IC FLASH 1MBIT SPI 104MHZ 8SOIC |
