English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH |
| 内存大小: | 64Mb (264 Bytes x 32K pages) |
| 内存接口: | SPI |
| 时钟频率: | 85 MHz |
| 写周期时间 - 字，页: | 8µs, 5ms |
| 访问时间: | - |
| 电压 - 电源: | 1.7V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TC) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-UDFN Exposed Pad |
| 供应商设备包: | 8-UDFN (5x6) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IS62WV102416EBLL-45BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 16MBIT PARALLEL 48VFBGA |
|
GS81302QT19GE-300IGSI Technology |
IC SRAM 144MBIT PAR 165FPBGA |
|
S25FL256LAGMFV000Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 16SOIC |
|
CY7C1308SV25C-167BZCRochester Electronics |
IC SRAM 9MBIT PARALLEL 165FBGA |
|
93C46AXT-I/SNRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8SOIC |
|
70T3599S133BFIRenesas Electronics America |
IC SRAM 4.5MBIT PAR 208CABGA |
|
CAT24C02WE-GRochester Electronics |
IC EEPROM 2KBIT I2C 400KHZ 8SOIC |
|
S-25C020A0I-T8T1GABLIC U.S.A. Inc. |
IC EEPROM 2KBIT SPI 5MHZ 8TSSOP |
|
S29GL064S70FHI030Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 64FBGA |
|
CY7C1370B-200ACRochester Electronics |
ZBT SRAM, 512KX36, 3NS |
|
CY7C1520JV18-300BZXCRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
FM93C66AENRochester Electronics |
EEPROM, 256X16, SERIAL PDIP8 |
|
M24C04-FDW6TPSTMicroelectronics |
IC EEPROM 4KBIT I2C 8TSSOP |
