类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | RAM |
技术: | MRAM (Magnetoresistive RAM) |
内存大小: | 256Kb (32K x 8) |
内存接口: | SPI |
时钟频率: | 40 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-VDFN Exposed Pad |
供应商设备包: | 8-DFN (5x6) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT58L64L18PT-10Rochester Electronics |
CACHE SRAM, 64KX18, 5NS PQFP100 |
|
R1EX24512ASAS0A#S0Rochester Electronics |
EEPROM, 64KX8, SERIAL |
|
S26KS256SDGBHB030Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 24FBGA |
|
24LC024HT-I/STRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 1MHZ 8TSSOP |
|
70V06L15PFG8Renesas Electronics America |
IC SRAM 128KBIT PARALLEL 64TQFP |
|
BR25G512FVT-3GE2ROHM Semiconductor |
IC EEPROM 512KBIT SPI 8TSSOP |
|
24FC04-I/PRoving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 1MHZ 8DIP |
|
CY7C1514V18-200BZXIRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
SN74LS20MR1Rochester Electronics |
1024-BIT EDGE TRIGGERED RAM |
|
MTFC64GAPALBH-IT TRMicron Technology |
IC FLASH 64GBIT MMC 153TFBGA |
|
71256S55DBRenesas Electronics America |
IC SRAM 256KBIT PAR 28CERDIP |
|
25LC512-E/SNRoving Networks / Microchip Technology |
IC EEPROM 512KBIT SPI 8SOIC |
|
CY7C277-40WCRochester Electronics |
UVPROM, 32KX8, 20NS |