类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 4Kb (256 x 8 x 2) |
内存接口: | I²C |
时钟频率: | 1 MHz |
写周期时间 - 字,页: | 5ms |
访问时间: | 450 ns |
电压 - 电源: | 1.7V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Through Hole |
包/箱: | 8-DIP (0.300", 7.62mm) |
供应商设备包: | 8-PDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY7C1514V18-200BZXIRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
SN74LS20MR1Rochester Electronics |
1024-BIT EDGE TRIGGERED RAM |
|
MTFC64GAPALBH-IT TRMicron Technology |
IC FLASH 64GBIT MMC 153TFBGA |
|
71256S55DBRenesas Electronics America |
IC SRAM 256KBIT PAR 28CERDIP |
|
25LC512-E/SNRoving Networks / Microchip Technology |
IC EEPROM 512KBIT SPI 8SOIC |
|
CY7C277-40WCRochester Electronics |
UVPROM, 32KX8, 20NS |
|
DS1249Y-70#Maxim Integrated |
IC NVSRAM 2MBIT PARALLEL 32EDIP |
|
IS43TR16256A-15HBLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 4GBIT PARALLEL 96TWBGA |
|
70T651S12BFI8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 208CABGA |
|
AT24C08C-MAHM-ERoving Networks / Microchip Technology |
IC EEPROM 8KBIT I2C 1MHZ 8UDFN |
|
BR25H160FJ-2CE2ROHM Semiconductor |
IC EEPROM 16KBIT SPI 10MHZ 8SOPJ |
|
71T75802S200BG8Renesas Electronics America |
IC SRAM 18MBIT PARALLEL 119PBGA |
|
SST39WF800B-70-4I-B3KE-TRoving Networks / Microchip Technology |
IC FLASH 8MBIT PARALLEL 48TFBGA |