English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | NVSRAM |
| 技术: | NVSRAM (Non-Volatile SRAM) |
| 内存大小: | 4Mb (512K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 20ns |
| 访问时间: | 20 ns |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 48-TFBGA |
| 供应商设备包: | 48-FBGA (6x10) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FM24V10-GCypress Semiconductor |
IC FRAM 1MBIT I2C 3.4MHZ 8SOIC |
|
7133LA25PFGIRenesas Electronics America |
IC SRAM 32KBIT PARALLEL 100TQFP |
|
IS46DR16128C-3DBLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 84TWBGA |
|
IS42S32400F-6TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PAR 86TSOP II |
|
IS61VPS51236B-250B3LIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165TFBGA |
|
70T3539MS133BCRenesas Electronics America |
IC SRAM 18MBIT PARALLEL 256CABGA |
|
DS2431P-A1+Maxim Integrated |
IC EEPROM 1KBIT 1-WIRE 6TSOC |
|
IS62WV20488EBLL-45BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 16MBIT PAR 48MINIBGA |
|
AS7C1026B-20TCNAlliance Memory, Inc. |
IC SRAM 1MBIT PARALLEL 44TSOP2 |
|
FEMC008GCG-T340Flexxon |
IC FLASH 64GBIT EMMC 153FBGA |
|
25LC020AT-H/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 10MHZ 8SOIC |
|
NDS63PT9-16ITInsignis Technology Corporation |
IC DRAM 64MBIT PAR 86TSOP II |
|
IS45S32400F-7TLA2ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PAR 86TSOP II |
